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IR2118 600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

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IR2118

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Description

600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

Not found, similar datasheet recommended

Title

600 V single high-side gate driver IC with single input

ECAD Module
Series: -
Brand: IOR
DateCode: N/A
Package / Case: DIP-8
Packaging: Tube
Part Status: Obsolete
Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: 8-DIP

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ECAD Module

Product Attributes

Description: The IR2118 is an isolated high and low side driver in a single 8-pin DIP package. Features: - Output peak current up to 2A - Operating supply voltage range 10.8V to 20V - Over-temperature and under-voltage shutdown - TTL compatible logic inputs - Optically Isolated - Internal logic for deadtime control Applications: - Motor control - Power supplies - Light dimmers - Industrial automation - Robotics (For reference only)

Introduction:

The IR2118 is a high voltage, high-speed power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), and Insulated-Gate Bipolar Transistor (IGBT) driver. Proprietary HVIC and latch immune CMOS technologies enable rugged- dazed monolithic construction. The logic Gate input is compatible with standard CMOS output. The output driver features a high pulse current Flow buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), and Insulated-Gate Bipolar Transistor (IGBT) in the high or low side configuration which operates up to 600volts.

Some Core Parameters:

SPECIAL FEATURES :

● Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

DV/DT immune

● Gate drive supply range from 10 to 20Volt

● Undervoltage lockout

● CMOS Schmitt-triggered inputs with pull-down n Output out of phase with the input

How it Uses in the work:

Internal Block Diagram:

MyFang/202007/30/f_5c3e6b790b9e45b5a4fc4d4f23b104ff.png

IR2118 Pinout Connections:

MyFang/202007/30/f_1bd6e4eda77343128d963de9e8d5a28b.png

IR2118 Pin Functions:

● Pin 1 (Vcc): Logic and gate drive supply

● Pin 2 (IN): Logic input for gate driver output (HO), out of phase with HO

● Pin 3 (COM): Low side return

● Pin 6 (Vs): High side floating supply return

● Pin 7 (Ho): High side gate drive output

● Pin 8 (VB): High side floating

Preview of the first 3 pages of the data sheet

Document Preview

Features
Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Gate drive supply range from to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of

Description

The is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates to 600 volts.

This/These diagram(s) show electrical connections only.

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.

High side floating supply offset voltage
Allowable offset supply voltage transient (figure 2)

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Logic supply voltage Logic input voltage Ambient temperature

Note 1: Logic operational for to +600V. Logic state held for -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

VBIAS (VCC, VBS) 1000 pF and = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time
Min. Typ. Max. Units Test Conditions

VBIAS (VCC, VBS) = 15V and = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

input voltage - logic "1" (IR2117) logic "0" (IR2118) Input voltage - logic "0" (IR2117) logic "1" (IR2118) High level output voltage, VBIAS - VO Low level output voltage, VO Offset supply leakage current Quiescent VBS supply current Quiescent VCC Supply Current Logic "1" input bias current (IR2117)

(IR2118) VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold Output high short circuit pulsed current

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Product Reviews

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11 buyer reviews from Singapore

Mary Johnson

IR2118STRPBF

United States

Length of registration:7 years

The testing result for the Intergrated Circuits IR2118STRPBF that was ordered from Utsource website was satisfactory. The circuit was tested for its function and it was found to be working properly. The circuit was tested for its current and voltage ratings and it was found to be within the specified limits. The circuit was also tested for its temperature ratings and it was found to be within the

Reply0

03/17/2023

M.H.M FAZIL

IR2118S

China 东阳市

Length of registration:4 years

good service

Reply0

10/24/2020

See all reviews >>

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IR2118 600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

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Alternate Names

IR2118

IR2118 has several brands around the world that may have alternate names for IR2118 due to regional differences or acquisition. IR2118 may also be known as the following names: