ZXGD3003E6TA
Category: PMIC - Gate Drivers
Description: The ZXGD3003E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. Inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Price range ($)
0.26764 2.86752
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ZXGD3003E6TA
ZXGD3003E6TA has several brands around the world that may have alternate names for ZXGD3003E6TA due to regional differences or acquisition. ZXGD3003E6TA may also be known as the following names:
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Description
ZXGD3003E6TA
Stock:33951 |
Diodes Incorporated |
The ZXGD3003E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. Inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates. |
≥1: S$1.27591 S$1.14832 ≥5: S$0.95694 S$0.86124 ≥10: S$0.66985 S$0.60287 ≥20: S$0.63796 S$0.57416 ≥50: S$0.57416 S$0.51675 ≥100: S$0.55820 S$0.50238 ≥200: S$0.54226 S$0.48804 ≥500: S$0.52632 S$0.47369 ≥1000: S$0.51037 S$0.45933
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Inquiry
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ZXGD3003E6TA
Stock:1000 |
Diodes 20+ |
The ZXGD3003E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. Inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates. |
≥1: S$1.47199 S$1.32479
More:
Inquiry
|
ZXGD3003E6TA
Stock:38195 |
Zetes 09+ |
The ZXGD3003E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. Inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates. |
≥1: S$2.86752 S$2.58077 ≥5: S$1.91168 S$1.72051 ≥10: S$1.72051 S$1.54846 ≥20: S$1.67272 S$1.50545 ≥50: S$1.62493 S$1.46244 ≥100: S$1.57714 S$1.41942 ≥200: S$1.52934 S$1.37641 ≥500: S$1.51023 S$1.35920 ≥1000: S$1.48155 S$1.33340
More:
Inquiry
|
ZXGD3003E6TA
Stock:9000 |
Diodes 20+ |
The ZXGD3003E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation delay times down to 2ns and rise/fall times down to 9ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. Inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates. |
≥1: S$0.26764 S$0.24087
More:
Inquiry
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Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over S$263.85,Overweight will be charged separately
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