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Home > Elec-component > Modules > IGBT
MODULE
Mitsubishi
600 Amp Igbt Module For High Power Switching Use Insulated Type
Description: The CM600HA-5F is a 600A, 600V, 5-pole, insulated-gate bipolar transistor (IGBT) module from Mitsubishi Electric. Features: * High current capacity of 600A * Low on-state voltage drop of
Stock:2000
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Stock:2000
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV VBRCES | 15A IC
Stock:2000
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Description: The CM25MD-24H is a Mitsubishi module designed for use in industrial automation applications. It is a 24V DC input, 5A output, and has a maximum switching frequency of 1kHz. Features:
Stock:2000
Minimum:1
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BSM25GD100D is a module manufactured by EUPEC/SIEMENS. It is a 1200V/100A IGBT module with a built-in fast diode. The module is designed for use in motor drives, UPS, welding machines, and other indus
Stock:2000
Minimum:1
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Description: The Mitsubishi CM400DY-12H is an IGBT power module with a current rating of 400A and a voltage rating of 1200V. Features: Built-in over-current protection (OCP) and short-circuit protec
Stock:2000
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Stock:10000
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Description: This is a SEMIKRON/EUPEC IGBT module with a voltage rating of 1200V and a current rating of 100A. Features: Low inductance Low switching losses High current capability High voltage ca
Stock:2000
Minimum:1
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The CM200E3U-12H is a module manufactured by Mitsubishi. It is a 200A, 3-phase, 12-pulse, high-performance, high-efficiency, low-noise, and low-harmonic current-mode PWM inverter. It is designed for u
Stock:2000
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MODULE
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Description: The MG25Q6ES50A is a 6-bit MOSFET module from Toshiba America Electronic Components. It is a high-speed, low-power, low-voltage MOSFET module designed for use in power management applica
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MODULE
Network Hub; Approval Categories:IEEE 802.3af Compatibility; Data Rate Max:100Mbps RoHS Compliant: Yes
MG200J1ZS50 is an IGBT module manufactured by Mitsubishi Electric. It is a high-power, high-speed switching device designed for use in motor control, inverter, and other power conversion applications.
Stock:2000
Minimum:1
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Description: BSM50GX120DN2 is an EUPEC-made IGBT module designed for medium voltage power conversion applications. It features low conduction and switching losses, fast switching times and low therma
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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CM50TF-24H is a module manufactured by Mitsubishi. It is a 50A IGBT module with a collector-emitter voltage of 1200V. It is designed for use in motor control, welding, and power supply applications. I
Stock:2000
Minimum:1
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CM100TF-12H is a module manufactured by Mitsubishi Electric. It is a 100A, 12-pulse, three-phase, full-wave rectifier module. It is designed for use in a wide range of applications, including motor dr
Stock:2000
Minimum:1
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CM20MD-12H is a Mitsubishi semi-conductor module designed for use in power and control boards. It is a power module consisting of three thyristors in a compact package. It has the features of fast swi
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MG100J2YS1 is an IGBT module manufactured by Mitsubishi Electric. It is a power module with a voltage rating of 600V and a current rating of 100A. It is designed for use in applications such as motor
Stock:2000
Minimum:1
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Description: The MG400Q2YS60A is a 600V, 400A insulated gate bipolar transistor (IGBT) module from Powerex Power Semiconductors. Features: Low saturation voltage High speed switching Low swit
Stock:2000
Minimum:1
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