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Description
The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.
Title
Bipolar Transistor, PNP, 150 V, 8.0 A
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High Current Gain - Bandwidth Product TO-220 Compact Package These Devices are Pb-Free and are RoHS Compliant*
Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base Current Total Device Dissipation
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS, 50 WATTS*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc)
Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 ms, Duty Cycle fT = hfe ftest.
ZqJC(t) = r(t) RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWERbreakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greaterTC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than theSome Part number from the same manufacture
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10000 buyer reviews from United States
James Wright
Length of registration:7 years
The MJE15031G is a high-performance integrated circuit from Utsource that is designed to provide excellent performance in power switching applications. It features a low on-resistance of 0.4 ohms and a maximum current rating of 15A. Additionally, it has a high frequency operation of up to 100kHz, making it suitable for high-speed switching applications.
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03/17/2023
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MJE15031G
MJE15031G has several brands around the world that may have alternate names for MJE15031G due to regional differences or acquisition. MJE15031G may also be known as the following names:
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