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1SS83 Silicon Epitaxial Planar Diode For High Voltage Switching
  • 1SS83
  • 1SS83
  • 1SS83
Sales:6
113521

5.0 out of 5 stars

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5 star 99.1%

Total products: 2398063

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1SS83

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Description

Silicon Epitaxial Planar Diode For High Voltage Switching

  • ECAD Module
  • Manufacturer Part Number: 1SS83TD-E
  • Brand: Hitachi
  • Package / Case: DO-35
  • Category: Integrated Circuits (ICs)
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • 1SS83 is a silicon diode manufactured by Hitachi. It is a DO-35 package type diode. Description: The 1SS83 is a silicon diode designed for general purpose rectification. It has a reverse voltage of 100V and a forward current of 1A. Features: Low forward voltage drop High surge current capability Low reverse leakage current High reliability Applications: The 1SS83 is used in a variety of applications including power supplies, rectifiers, and voltage regulators. It can also be used in automotive and industrial applications. (For reference only)

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HD74AC157FP : AC SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, PDSO16 Specifications: Function: Decoder ; Supply Voltage: 3.3V ; Package Type: FP-16DA ; Logic Family: CMOS ; Number of Pins: 16 ; Propagation Delay: 15 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F)

UPD780113GB(A1)-XXX-8ES : 8-BIT, MROM, 10 MHz, MICROCONTROLLER, PDSO30 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 10 MHz ; ROM Type: MROM ; Supply Voltage: 4 to 5.5 volts ; I/O Ports: 22 ; Package Type: SSOP, Other, 0.300 INCH, PLASTIC, SSOP-30 ; Operating Range: Industrial ; Pin Count: 30 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Features: PWM

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151CMQ : General Purpose/. Schottky Rectifier. IF(AV) Rectangular waveform VRRM range IFSM 5 µs sine = 125°C (per leg) range The 151CMQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175° C junction temperature. Typical applications are in switching power supplies,.

1N5221B-LCC3 : Zener Voltage Regulator Diode in Hermetic Ceramic Surface Mount Package For High Reliability Applications.

1N5624thru1N5627 : Glass Passivated. Glass Passivated Junction Rectifier. Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of MIL-S-19500 Typical IR less than 0.1µA 3.0 ampere operation at TA=70°C with no thermal runaway High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs.

1N746A-1N759ASeries : Half Watt Zener. Power Dissipation Storage Temperature Range Operating Junction Temperature Lead Temperature (1/16" from case for 10 seconds) *These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory.

IRHY54130CM : Radiation Hardened Power MOSFET Thru-hole (to-257aa): 100v, 16a. Part Number Radiation Level IRHY57130CM 100K Rads (Si) IRHY53130CM 300K Rads (Si) IRHY54130CM 600K Rads (Si) IRHY58130CM 1000K Rads (Si) RDS(on) ID 18A* International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance.

JANTX1N5544B : Low Voltage Avalanche Zener.

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SFU9214 : 250V P-channel A-FET. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

VN0610LL : Small Signal MOSFET 190 Mamps, 60 Volts, Package: TO-92 (TO-226), Pins=3.

BAS16212 : 0.215 A, 85 V, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 215 mA ; trr: 0.0040 ns.

MSAT-N25 : 200 V, SILICON, PIN DIODE. s: Package: ROHS COMPLIANT PACKAGE-2 ; Number of Diodes: 1 ; PD: 2000 milliwatts ; RoHS Compliant: RoHS.

S8AL-TP : 8 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB. s: Package: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 8000 mA.

SD1100C12CPBF : 1400 A, 1200 V, SILICON, RECTIFIER DIODE. s: Package: CERAMIC, B-43, PUK-2 ; Number of Diodes: 1 ; VRRM: 1200 volts ; IF: 1.40E6 mA ; RoHS Compliant: RoHS.

SPSW1027RJ : RESISTOR, WIRE WOUND, 10 W, 5 %, 300 ppm, 27 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 27 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 10 watts (0.0134 HP) ; Standards and Certifications:.

THNR1115-1R7 : 1 ELEMENT, 1.7 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 1.7 microH.

VF20120C-M3/4W : 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 10000 mA ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

1N4607-TR : 0.2 A, SILICON, SIGNAL DIODE, DO-35. s: Diode Type: General Purpose ; IF: 200 mA ; trr: 0.0100 ns.

2SJ356-AZ : 2 A, 60 V, 0.95 ohm, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.9500 ohms ; Number of units in IC: 1.

305PMC600K : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 600 V, 3 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 3 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 600 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40.

930C1P22J-F : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 100 V, 0.22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting.

Product Reviews

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    10000 buyer reviews from United States

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    Sarah Barnes

    1SS83
    us United States

    Length of registration:7 years

    The 1SS83 integrated circuit is a high-performance, low-power, low-cost solution for a variety of applications. It features a wide operating voltage range, low power consumption, and high speed operation. It is also highly reliable and has a long life expectancy. Utsource is a reliable distributor of quality components, so you can be sure you are getting a quality product when you purchase the 1SS

    0

    0

    Reply0

    03/17/2023

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    Robert Seward

    1SS83
    us United States Huntsville

    Length of registration:3 years

    The seller is very practical and shipped quickly. Met my expectations and the product is in good condition.

    0

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    Reply0

    11/22/2022

    Alternate Text

    Bpk.Heriady

    1SS83
    id Indonesia jakarta barat

    Length of registration:9 years

    good and satisfied

    0

    0

    Reply0

    04/06/2018

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