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Description
N-channel enhancement mode vertical D-MOS transistorsND-MOS
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General Description
These N-Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged,reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
● 0.17A, 100V
- RDS(on)= 6Ω@ VGS = 10V
- RDS(on)= 10Ω@ VGS = 4.5V
● High Density Cell Design for Extremely Low RDS(on)
● Rugged and Reliable
● Compact Industry Standard SOT-23 Surface Mount Package
● This Device is Pb-Free and Halogen Free
Preview of the first 3 pages of the data sheet
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10000 buyer reviews from United States
Lauren Miller
Length of registration:7 years
The BSS123 integrated circuit is a great choice for its versatile functionality. It is designed to provide efficient power management and can be used in a variety of applications. It is also designed to be cost-effective and reliable, making it a great choice for any project.
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03/17/2023
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All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
BSS123
BSS123 has several brands around the world that may have alternate names for BSS123 due to regional differences or acquisition. BSS123 may also be known as the following names:
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Stock Status: 10000
Minimum: 4
Total Price:
Unit Price:0.70900
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United States
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6 sellers Choices
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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