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Country CodeON SEMICONDUCTOR
Your search MJD122G and relate product result :7 items
Description: NPN Bipolar Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low Noise High Collector-Emitter Voltage Low Collector-Base Voltage High Switching Spe
Stock:282
Minimum:3
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MJD122G is a NPN epitaxial silicon transistor in a TO-252 (DPAK) plastic package. It is designed for use in general-purpose amplifier and switching applications. Features: * Low collector-emitter sat
Stock:10000
Minimum:7
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Stock:980
Minimum:3
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Stock:2172
Minimum:15
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Stock:10000
Minimum:18
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TO-252
On Semiconductor
13+
Complementary Darlington Power Transistor
MJD122G is a PNP Bipolar Transistor manufactured by ON Semiconductor. It is a low voltage, high current device designed for general purpose switching and amplifier applications. Description: The MJD1
Stock:10000
Minimum:18
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Stock:250
Minimum:5
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company